unisonic technologies co., ltd utd484 power mosfet www.unisonic.com.tw 1 of 7 copyright ? 2008 unisonic technologies co., ltd qw-r502-207.a n-channel enhancement mode field effect transistor ? description the utd484 uses advanced trench technology to provide excellent r ds(on) , low gate charge and operation with low gate voltages. this device is suitable for use as a load switch or in pwm applications. ? features * r ds(on) = 15m ? @v gs = 10 v * low capacitance * low gate charge * fast switching capability * avalanche energy specified ? symbol 1.gate 3.source 2.drain *pb-free plating product number: utd484l ? ordering information ordering number pin assignment normal lead free plating package 1 2 3 packing utd484-tn3-r UTD484L-TN3-R to-252 g d s tape reel utd484-tn3-t utd484l-tn3-t to-252 g d s tube
utd484 power mosfet unisonic technologies co., ltd 2 of 6 www.unisonic.com.tw qw-r502-207.a ? absolute maximum ratings (t a = 25c, unless otherwise specified) parameter symbol ratings unit drain-source voltage v dss 30 v gate-source voltage v gss 20 v continuous drain current t c =25c i d 25 a pulsed drain current(note 1) i dm 80 a avalanche current(note 1) i ar 15 a repetitive avalanche energy l=0.3mh(note 1) e ar 33 mj t c =25c 50 power dissipation t a =25c p d 2.1 w junction temperature t j +150 c storage temperature t stg -55 ~ +175 c note: 1. absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. 2. pulse width limited by t j(max) ? thermal data parameter symbol min typ max unit junction-to-ambient ja 55 60 junction-to-case jc 2.3 3 c/w ? electrical characteristics (t j =25c, unless otherwise specified) parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage bv dss v gs =0 v, i d =250 a 30 v drain-source leakage current i dss v ds =24v, v gs =0 v 1 a gate-body leakage current i gss v ds =0 v, v gs = 20v 100 na on characteristics gate threshold voltage v gs(th) v ds =v gs , i d =250 a 1 1.5 2.5 v on state drain current i d(on) v ds =5 v, v gs =10v 80 a v gs =10 v, i d =20 a 12.1 15 static drain-source on-resistance r ds(on) v gs =4.5 v, i d =15 a 18.5 23 m ? dynamic parameters input capacitance c iss 938 1220 output capacitance c oss 142 reverse transfer capacitance c rss v ds =15 v, v gs =0v, f=1mhz 99 pf switching parameters total gate charge q g 17.5 21 gate source charge q gs 3 gate drain charge q gd v ds =15v, v gs =10v, i d =20 a 4.1 nc turn-on delay time t d(on) 5 turn-on rise time t r 12 turn-off delay time t d(off) 19 turn-off fall-time t f v gs =10v,v ds =15v,r l =0.75 ? , r gen =3 ? 6 ns source- drain diode ratings and characteristics diode forward voltage v sd i s =1a,v gs =0v 0.71 1 v maximum body-diode continuous current i s 21 a body diode reverse recovery time t rr 19 21 ns body diode reverse recovery charge q rr i f =20 a, di/dt=100a/ s 10 12 nc
utd484 power mosfet unisonic technologies co., ltd 3 of 6 www.unisonic.com.tw qw-r502-207.a ? typical characteristics drain current,i d (a) drain current,i d (a) 0.6 1.6 1.4 1.2 1 0.8 0 25 50 75 100 125 150 175 20 16 12 8 4 0 0 5 10 15 20 25 junction temperature ( ) drain current,i d (a) normalized on-resistance on-resistance vs. junction temperature on-resistance vs. drain current and gate voltage drain to source on-resistance, r ds(on) (m ) v gs =4.5v v gs =10v -50 -25 v gs =10v i d =20a v gs =4.5v i d =15a pulse width 80 s, duty cycle 0.5%. pulse width 80 s, duty cycle 0.5%. reverse drain current,i s (a) drain to source on-resistance, r ds(on) (m ? )
utd484 power mosfet unisonic technologies co., ltd 4 of 6 www.unisonic.com.tw qw-r502-207.a ? typical characteristics(cont.) c a p a c i t a n c e ( p f ) gate to source voltage,v gs (v) drain current,i d (a) power (w) 10 1 0.1 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 normalized maximum transient thermal impedance pulse width (s) normalized transient thermal resistance,z jc in descending order d=0.5,0.3,0.1,0.05,0.02,0.01,single pulse d=t on /t t j,pk =tc+p dm .z jc . jc ja =3 /w single pulse p dm t on t
utd484 power mosfet unisonic technologies co., ltd 5 of 6 www.unisonic.com.tw qw-r502-207.a ? typical characteristics(cont.) 40 30 20 10 0 0 25 50 75 100 125 175 150 power de-rating case temperature,t c ( ) power dissipation (w) 25 20 15 10 5 0 0.00001 0.0001 0.001 time in avalanche,t a (s) single pulse aval anche capability peak avalanche current,i d (a) t a = ll d bv-v dd t a =25 t a =150 0.000001 30 35 40 power (w) current rating,i d (a) 1000 100 10 1 0.1 0.01 0.001 0.0001 0.00001 0.001 0.01 0.1 1 10 10 normalized maximum transient thermal impedance pulse width (s) normalized transient thermal resistance,z ja in descending order d=0.5,0.3,0.1,0.05,0. 02,0.01,single pulse d=t on /t t j,pk =ta+p dm .z ja . ja ja =60 /w p dm t on t single pulse
utd484 power mosfet unisonic technologies co., ltd 6 of 6 www.unisonic.com.tw qw-r502-207.a utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior writ ten consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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